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| SIMOPAC(R) Module BSM 151 VDS = 500 V ID = 48 A R DS(on) = 0.12 q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 151 Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1004-A2 Symbol Values 500 500 20 48 192 - 55 ... + 150 625 0.20 2500 16 11 F 55/150/56 Unit V VDS VDGR VGS ID ID puls Tj, Tstg Ptot Rth JC Vis - - - - Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C Pulsed drain current, TC = 25 C Operating and storage temperature range Power dissipation, TC = 25 C Thermal resistance Chip-case Insulation test voltage2), t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) 2) A C W K/W Vac mm - See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 44 03.96 BSM 151 Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VDS = VGS, ID = 1 mA Zero gate voltage drain current VDS = 500 V, VGS = 0 Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 30 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max., ID = 30 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 250 V, VGS = 10 V ID = 30 A, RGS = 3.3 Turn-off time toff (toff = td (off) + tf) VCC = 250 V, VGS = 10 V ID = 30 A, RGS = 3.3 Values typ. max. Unit V(BR)DSS 500 - 3.0 - 4.0 V VGS(th) 2.1 I DSS - - 50 300 10 0.1 250 1000 A IGSS - 100 nA - 0.12 RDS(on) gfs Ciss Coss Crss td (on) tr td (off) tf 30 - - - - - - - 45 8 1.2 0.5 36 25 260 50 - 11 1.7 0.7 - - - - S nF ns Semiconductor Group 45 BSM 151 Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse diode Continuous reverse drain current TC = 25 C Pulsed reverse drain current TC = 25 C Diode forward on-voltage IF = 96 A , VGS = 0 Values typ. max. Unit IS - - - 1.1 48 192 A ISM - VSD - 1.4 V Semiconductor Group 46 BSM 151 Characteristics at Tj = 25 C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 C Typ. output characteristics ID = f (VDS) parameter: tp = 80 s Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 s, VDS = 25 V Drain current ID = f (TC) parameter: VGS 10 V, Tj = 150 C Semiconductor Group 47 BSM 151 Drain-source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 C) Drain source on-resistance RDS (on) = f (Tj) parameter: ID = 30 A; VGS = 10 V, (spread) Typ. capacitances C= f (VDS) parameter: VGS = 0, f = 1 MHz Forward characteristics of reverse diode IF = f (VSD), parameter: Tj, tp = 80 s (spread) Semiconductor Group 48 BSM 151 Typ. gate charge VGS = f (QGate) parameter: IDpuls = 63 A Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 C, Tj 150 C Semiconductor Group 49 |
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